EC6201 ELECTRONIC DEVICES
EC6201 ELECTRONIC DEVICES
EC6201
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ELECTRONIC DEVICES
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L T P C
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3
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3
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OBJECTIVES:
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The
student should be made to:
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·
Be
exposed to basic electronic devices
·
Be
familiar with the theory, construction, and operation of Basic electronic
devices.
UNIT I SEMICONDUCTOR DIODE 9
PN junction diode, Current equations,
Diffusion and drift current densities, forward and reverse bias
characteristics, Switching Characteristics.
NPN
-PNP -Junctions-Early effect-Current equations – Input and Output
characteristics of CE, CB CC-Hybrid -π model - h-parameter model, Ebers Moll
Model- Gummel Poon-model, Multi Emitter Transistor.
UNIT III FIELD EFFECT TRANSISTORS 9
JFETs – Drain and Transfer
characteristics,-Current equations-Pinch off voltage and its
significance-MOSFET- Characteristics- Threshold voltage -Channel length
modulation, D-MOSFET, E-MOSFET-,Current equation - Equivalent circuit model and
its parameters, FINFET,DUAL GATE MOSFET.
UNIT IV SPECIAL
SEMICONDUCTOR DEVICES 9
Metal-Semiconductor Junction- MESFET,
Schottky barrier diode-Zener diode-Varactor diode –Tunnel diode- Gallium
Arsenide device, LASER diode, LDR.
UNIT V POWER
DEVICES AND DISPLAY DEVICES 9
UJT, SCR, Diac, Triac, Power BJT-
Power MOSFET- DMOS-VMOS. LED, LCD, Photo transistor, Opto Coupler, Solar cell,
CCD.
TOTAL: 45 PERIODS
OUTCOMES:
At the end of the course, the student should be able to:
·
Explain
the theory, construction, and operation of basic electronic devices.
·
Use
the basic electronic devices
TEXT BOOKS
1. Donald A Neaman, “Semiconductor
Physics and Devices”, Third Edition, Tata Mc GrawHill Inc.
2007.
REFERENCES:
1.
Yang, “Fundamentals of Semiconductor devices”, McGraw Hill International
Edition,
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1978.
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2. Robert Boylestad and Louis Nashelsky,
“Electron Devices and Circuit Theory” Pearson Prentice
Hall,
10th edition,July 2008.
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